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Advance Technical Information
PolarHTTM HiPerFET Power MOSFET
N-Channel Enhancement Mode
IXFH 150N15P IXFK 150N15P
VDSS = 150 V ID25 = 150 A RDS(on) 13 m
TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-264 Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M Continuous Transient TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 175C, RG = 4 TC = 25C 714 -55 ... +175 175 -55 ... +175 300 W C C C C Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Maximum Ratings 150 150 20 30 150 75 340 60 80 2.5 10 V V
G
V V A A A A mJ J V/ns
G D
D
S
(TAB)
TO-264(SP) (IXTK)
D (TAB) S D = Drain TAB = Drain
G = Gate S = Source
1.13/10 Nm/lb.in. 5.5 10 g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175C
Characteristic Values Min. Typ. Max. 150 3.0 5.0 100 25 500 13 V V nA A A m
Advantages Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2005 IXYS All rights reserved
DS99328(02/05)
IXFH 150N15P IXFK 150N15P
TO-247 AD Outline Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 55 80 5800 VGS = 0 V, VDS = 25 V, f = 1 MHz 1730 400 30 VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 RG = 3.3 (External) 33 100 28 190 VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 105 S pF pF pF ns ns ns ns nC nC nC 0.21 K/W TO-247 TO-264 0.21 0.15 K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthCK
VDS= 10 V; ID = 0.5 ID25, pulse test
Dim.
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 150 340 1.5 A A V
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
TO-264 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25 A -di/dt = 100 A/s VR = 100 V
150 n s 0.8 C
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30
Min.
Inches Max.
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2
IXTK 150N15P IXTQ 150N15P
Fig. 1. Output Characteristics @ 25C
150 VGS = 10V 9V 8V 7V 330 300 270 240 VGS = 10V 9V
Fig. 2. Extended Output Characteristics @ 25C
120
I D - Amperes
90 6V 60
I D - Amperes
210 180 150 120 90 7V 8V
30
5V
60 30 6V
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0 0 1 2 3 4 5 6 7 8 9 10
V D S - Volts Fig. 3. Output Characteristics @ 150C
150 VGS = 10V 9V 8V 2.8 2.6 2.4 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Te m perature
R D S ( o n ) - Normalized
120
2.2 2 1.8 1.6 1.4 1.2 1 I D = 75A I D = 150A
I D - Amperes
90
7V
60 6V 30 5V 0 0 1 2 3 4 5
0.8 0.6 -50 -25 0 25 50 75 100 125 150 175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
3.4 3.1 TJ = 175C 90 80 70
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
External Lead Current Limit
R D S ( o n ) - Normalized
2.8
I D - Amperes
2.5 2.2 1.9 VGS = 15V 1.6 1.3 1 TJ = 25C 0.7 0 50 100 VGS = 10V
60 50 40 30 20 10 0
I D - Amperes
150
200
250
300
350
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXFH 150N15P IXFK 150N15P
Fig. 7. Input Adm ittance
250 225 200 110 100 90 80
Fig. 8. Transconductance
g f s - Siemens
175
I D - Amperes
150 125 100 75 50 25 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 TJ = 150C 25C -40C
70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 225 250 TJ = -40C 25C 150C
V G S - Volts Fig. 9. Source Curre nt vs. Source -To-Drain Voltage
350 300 250 10 9 8 VDS = 75V I D = 75A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
7
VG S - Volts
TJ = 150C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
200 150 100 50 0
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Are a
1000 TJ = 175C TC = 25C 25s
Fig. 11. Capacitance
100,000
f = 1MHz
R DS(on) Limit
Capacitance - picoFarads
10,000
Ciss
I D - Amperes
Coss
1,000
100 1ms 10ms
100s
Crss
DC 100 0 5 10 15 20 25 30 35 40 10 10
100
1000
V DS - Volts
V D S - Volts
IXFH 150N15P IXFK 150N15P
F ig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R( t h ) J C - C / W
0.10
0.01 1 10 100 1000
Pu ls e W id th - m illis e c o n d s
(c) 2005 IXYS All rights reserved

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